2SA1384R Даташит - Toshiba
производитель

Toshiba
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC3515
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) ( Rev : 1997 )
Toshiba