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2SA1382
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2SA1382 Даташит - Toshiba
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Power Amplifier Applications
High-Speed Switching Applications
• High DC current gain: hFE = 150 to 400 (IC = −0.5 A)
• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 μs (typ.)
Номер в каталоге
Компоненты Описание
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производитель
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Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
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