2N7002KW Даташит - SEC Electronics Inc.
производитель

SEC Electronics Inc.
FEATURES
• RDS(ON), VGS@10V, IDS@500mA=3Ω
• RDS(ON), VGS@4.5V, IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers: Relays, Displays, Lamps,
Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
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Компоненты Описание
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производитель
115mA, 60V, RDS(ON) 4 Ω N-Ch Small Signal MOSFET with ESD Protection
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0.3A, 60V, RDS(ON) 4 Ω N-Ch Small Signal MOSFET with ESD Protection
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115mA, 60V Dual N-Channel Small Signal MOSFET
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115mA, 60V Dual N-Channel Small Signal MOSFET
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115mA, 60V, RDS(ON) 5Ω N-Channel Plastic-Encapsulate MOSFETS
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Small signal MOSFET 60V, 115mA, N-Channel SOT-23
Unspecified
190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection
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60V, 115mA, N-CHANNEL MOSFET
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N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
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P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ
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