General description
   N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Logic-level compatible
• Side wettable flanks for optical solder inspection
• Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
• AEC-Q101 qualified

APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits