FEATURES
• RDS(ON), VGS@10V, IDS@500mA=3Ω
• RDS(ON), VGS@4.5V, IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,
   Solid-State Relays Drivers： Relays, Displays, Lamps,
   Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives