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2N5302(2001) Даташит - ON Semiconductor

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2N5302

Компоненты Описание

High-Power NPN Silicon Transistor

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ON Semiconductor

High-Power NPN Silicon Transistor

. . . for use in power amplifier and switching circuits applications.

• Low Collector–Emitter Saturation Voltage –
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

Номер в каталоге

Компоненты Описание

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производитель

NPN SILICON HIGH POWER TRANSISTOR

Microsemi Corporation

NPN HIGH POWER SILICON TRANSISTOR

Microsemi Corporation

NPN HIGH POWER SILICON TRANSISTOR

Microsemi Corporation

NPN HIGH POWER SILICON TRANSISTOR

Microsemi Corporation

HIGH POWER NPN SILICON TRANSISTOR

STMicroelectronics

HIGH POWER NPN SILICON TRANSISTOR ( Rev : 1997 )

STMicroelectronics

HIGH POWER NPN SILICON TRANSISTOR

STMicroelectronics

HIGH POWER NPN SILICON TRANSISTOR

New Jersey Semiconductor

NPN HIGH POWER SILICON TRANSISTOR

Microsemi Corporation

HIGH POWER TRANSISTOR SILICON NPN

New Jersey Semiconductor

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