Номер в каталоге
26NM60N
Компоненты Описание
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12 Pages
File Size
672.3 kB
производитель
STMicroelectronics
26NM60N Даташит - STMicroelectronics
STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET
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