Номер в каталоге
260N4F7
Компоненты Описание
Other PDF
no available.
PDF
page
11 Pages
File Size
465 kB
производитель
STMicroelectronics
260N4F7 Даташит - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
◾ Among the lowest RDS(on) on the market
◾ Excellent figure of merit (FoM)
◾ Low Crss/Ciss ratio for EMI immunity
◾ High avalanche ruggedness
APPLICATIONs
◾ Switching applications
Номер в каталоге
Компоненты Описание
View
производитель
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 60 V, 4.6 mΩ typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H2PAK-2 package
STMicroelectronics
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
Share Link: 