DESCRIPTION
The CENTRAL SEMICONDUCTOR 1N3600, 1N4150, silicon planar epitaxial diode is  characterized by its miniature size, ultra fast switching speed, low capacitance, low leakage, and high conductance. Accordingly, it is ideally suited for applications such as pulse applications, avalanche circuits, core drivers, and for any critical circuit requiring high conductance at power dissipation without sacrificing fast recovery capability. (Both devices have identical electrical and mechanical specifications).