Номер в каталоге
10P6F6
Компоненты Описание
Other PDF
PDF
page
24 Pages
File Size
1.1 MB
производитель
STMicroelectronics
10P6F6 Даташит - STMicroelectronics
STMicroelectronics
Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
View
производитель
N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2015 )
STMicroelectronics
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages ( Rev : 2018 )
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
STMicroelectronics
Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Share Link: 