General Description
   These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

FEATUREs
● VDS = 30V,ID =90A
   RDS(ON),3.8 mΩ (Typ) @ VGS =10V
   RDS(ON), 6.4mΩ (Typ) @ VGS =4.5V
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances

APPLICATION
● DC-DC converters
● Synchronous Rectifier