MTP3055V Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MTP3055V Datasheet PDF : 8 Pages
| |||
MTP3055V
TYPICAL ELECTRICAL CHARACTERISTICS
24
TJ = 25°C
VGS = 10 V
8V
9V
20
7V
16
12
6V
8
5V
4
4V
0
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
24
VDS ≥ 10 V
20
16
TJ = -Ă55°C
25°C
100°C
12
8
4
0
2
3
4
5
6
7
8
9
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.30
VGS = 10 V
0.25
0.20
TJ = 100°C
0.15
25°C
0.10
-Ă55°C
0.05
0
0
4
8
12
16
20
24
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.15
TJ = 25°C
0.14
0.13
0.12
VGS = 10 V
0.11
0.10
15 V
0.09
0.08
0
4
8
12
16
20
24
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
1.4 ID = 6 A
100
VGS = 0 V
1.2
10
TJ = 125°C
1.0
0.8
0.6
-Ă50 -Ă25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
http://onsemi.com
3
Share Link: 