STB85NF3LL-1 Просмотр технического описания (PDF) - STMicroelectronics
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производитель
STB85NF3LL-1
STMicroelectronics
STB85NF3LL-1 Datasheet PDF : 9 Pages
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STP85NF3LL/STB85NF3LL-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15V, ID = 30A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 24V, ID = 60A,
VGS = 4.5V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15V, ID = 30A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
Vclamp =24V, ID =30A
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
22
ns
130
ns
30
40
nC
9
nC
12.5
nC
Min.
Typ.
36.5
36.5
Max.
Unit
ns
ns
32
ns
23
ns
40
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 85A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 85A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
85
A
340
A
1.3
V
65
ns
105
nC
3.4
A
Safe Operating Area
Thermal Impedence
3/9
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