STW40NS15 Просмотр технического описания (PDF) - STMicroelectronics
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STW40NS15 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 75V, ID = 20A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
VDD = 120V, ID = 40A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off Delay Time
Tf
Fall Time
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 75V, ID = 20A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp = 120V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 40A, VGS = 0
trr
Reverse Recovery Time
ISD = 40A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW40NS15
Min. Typ. Max. Unit
25
ns
45
ns
100
110
nC
17
nC
47
nC
Min.
Typ.
85
Max.
Unit
47
ns
35
ns
70
ns
Min. Typ. Max. Unit
40
A
160
A
1.5
V
270
ns
200
nC
1.5
A
3/6
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