2N7000 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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2N7000 Datasheet PDF : 5 Pages
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage*
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
V(BR)DSS
V(GS)th
lGSS
IDSS
ID(ON)
Drain-Source On-Resistance*
RDS(on)
Forward Trans conductance*
gfs
Drain-source on-voltage*
VDS(on)
Input Capacitance **
Output Capacitance **
Reverse Transfer Capacitance **
Turn-on Time **
Turn-off Time **
Ciss
Coss
Crss
td(on)
td(off)
*Pulse test
**These parameters have no way to verify.
VGS=0 V, ID=10μA
VDS=VGS, ID=1mA
VDS=0 V, VGS=±15 V
VDS=60 V, VGS=0 V
VGS=4.5 V, VDS=10 V
VGS=4.5V, ID=75mA
VGS=10V, ID=500mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
VDS=25V, VGS=0V, f=1MHz
VDD=15 V, RL=30Ω
ID=500mA,VGEN=10 V
RG=25 Ω
Min
Typ
Max Unit
60
V
0.8
3
±10
nA
1
μA
75
mA
6
Ω
5
100
ms
2.5
V
0.45
V
60
25
pF
5
10
ns
10
www.cj-elec.com
2
E,Aug,2016
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