BUS13A Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

BUS13A

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BUS13A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH

VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=8A; IB=1.6A

VCE=RatedBVCEO; VBE=0

TC=125

VEB=9V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=8A; IB1=- IB2=1.6A

MIN TYP. MAX UNIT

450

V

1.5

V

1.6

V

1

4

mA

10

mA

15

50

1.0

µs

4.0

µs

0.8

µs

2

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