SI3585CDV(2011) Просмотр технического описания (PDF) - Vishay Semiconductors

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SI3585CDV
(Rev.:2011)

N- and P-Channel 20 V (D-S) MOSFET

Vishay Semiconductors 

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1

Duty Cycle = 0.5

Si3585CDV

Vishay Siliconix

0.2

0.1

0.1

0.05

0.02

0.01

10-4

Single Pulse

10-3

Notes:

PDM

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = RthJA = 150 °C/W

3. TJM - TA = PDMZthJA(t)

4. Surface Mounted

10-2

10-1

1

10

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1000

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10-4

10-3

10-2

10-1

1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Document Number: 67470

www.vishay.com

S11-0613-Rev. A, 04-Apr-11

7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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