SI2335DS(2000) Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SI2335DS
(Rev.:2000)

P-Channel 12-V (D-S) MOSFET

Vishay Semiconductors 

Si2335DS

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currenta

Drain-Source On-Resistancea

Forward Transconductancea

Diode Forward Voltage

Dynamicb

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switchingc

Turn-On Time

Turn-Off Time

Symbol

Test Conditions

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VSD

VGS = 0 V, ID = –10 mA

VDS = VGS, ID = –250 mA

VDS = 0 V, VGS = "8 V

VDS = –9.6 V, VGS = 0 V

VDS = –9.6 V, VGS = 0 V, TJ = 55_C

VDS v –5 V, VGS = –4.5 V

VDS v –5 V, VGS = –2.5 V

VGS = –4.5 V, ID = –4.0 A

VGS = –2.5 V, ID = –3.5 A

VGS = –1.8 V, ID = –2.0 A

VDS = –5 V, ID = –4.0 A

IS = –1.6 A, VGS = 0 V

Qg

Qgs

Qgd

Ciss

Coss

Crss

VDS = –6 V, VGS = –4.5 V

ID ^ –4.0 A

VDS = –6 V, VGS = 0, f = 1 MHz

td(on)

tr

td(off)

tf

VDD = –6 V, RL = 6 W

ID ^ –1.0 A, VGEN = –4.5 V

RG = 6 W

Notes

a. Pulse test: PW v300 ms duty cycle v2%.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Min

–12

–0.45

–15

–6

Limits

Typ

Max

"100

–1

–10

0.042

0.058

0.082

7

0.051

0.070

0.106

–1.2

9

15

1.9

1.5

1225

260

130

13.0

20

15

25

50

70

19

35

Unit

V

nA

mA

A

W

S

V

nC

pF

ns

www.vishay.com

2

Document Number: 71314

S-02303—Rev. A, 23-Oct-00

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