P0550ETFS Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

P0550ETFS

N-Channel Enhancement Mode MOSFET

Unspecified 

P0550ETF / P0550ETFS

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

500V

1.55Ω @VGS = 10V

5A

TO-220F

TO-220FS

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

±30

Continuous Drain Current2

Pulsed Drain Current1

Avalanche Current3

Avalanche Energy3

TC = 25 °C

TC = 100 °C

ID

IDM

IAS

EAS

5

3.2

20

2.5

31.2

Power Dissipation

TC = 25 °C

PD

32

TC = 100 °C

12

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 to 150

UNITS

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

1Pulse width limited by maximum junction temperature.

2Ensure that the channel temperature does not exceed 150°C.

3VDD = 50V, L = 10mH, starting TJ = 25°C

SYMBOL

RqJC

RqJA

TYPICAL

MAXIMUM

3.9

62.5

UNITS

°C / W

REV 1.0

1

2015/6/11

Share Link: