STP32N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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STP32N65M5

N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages

STMicroelectronics 

STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5

Test circuits

3

Test circuits

Figure 18. Test circuit for resistive load switching times

Figure 19. Test circuit for gate charge behavior

VDD

12 V

47 kΩ

1 kΩ

ct(s) VGS

u pulse width

VD

RG

RL

2200

+ μF

3.3

μF

VDD

D.U.T.

te Prod AM01468v1

bsole Figure 20. Test circuit for inductive load switching and

diode recovery times

VGS

pulse width

+

2200

μF

1 kΩ

IG= CONST

2.7 kΩ

47 kΩ

100 nF

100 Ω

D.U.T.

VG

AM01469v1

Figure 21. Unclamped inductive load test circuit

ct(s) - O A

D

AA

du G

D.U.T.

fast

diode

100 µH

S

ro B

25 Ω

BB

D

3.3

µF

1000

+ µF

VDD

PG

D.U.T.

te+ RG

S

Obsole_

L

VD

2200

+ µF

3.3

µF

VDD

ID

Vi

pulse width

D.U.T.

AM01471v1

AM01470v1

Figure 22. Unclamped inductive waveform

V(BR)DSS

VD

VDD

IDM

ID

VDD

AM01472v1

Figure 23. Switching time waveform

Id

90%Vds

Concept waveform for Inductive Load Turn-off

90%Id

Vgs

90%Vgs on

10%Vds

Vgs(I(t ))

Vds

Tdelay -off

Trise

Tfall

Tcross -over

10%Id

AM05540v2

DS12808 - Rev 1

page 8/21

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