STD9NM40N Просмотр технического описания (PDF) - STMicroelectronics

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STD9NM40N

N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

STD9NM40N, STP9NM40N

N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET

in DPAK and TO-220 packages

Datasheet — production data

Features

Order codes

STD9NM40N

STP9NM40N

VDSS@TJMAX RDS(on)max. ID

450 V

< 0.79 Ω 5.6 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

TAB

3

1

DPAK

TAB

3

2

1

TO-220

Figure 1. Internal schematic diagram

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3

!-V

Table 1. Device summary

Order codes

STD9NM40N

STP9NM40N

Marking

9NM40N

Packages

DPAK

TO-220

Packaging

Tape and reel

Tube

December 2012

This is information on a product in full production.

Doc ID 023762 Rev 2

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