BAS40-04HYFH Просмотр технического описания (PDF) - ROHM Semiconductor

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BAS40-04HYFH

Schottky Barrier Diode

ROHM Semiconductor 

BAS40-04HYFH

Schottky Barrier Diode

(AEC-Q101 qualified) Data sheet

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline

VR

40

V

IF

120

mA

IFSM

600

mA

●Features

High reliability

Small mold type

Low VF

●Inner Circuit

　　　

　

　

　

　

　

　

　

　

　　　

●Application

●Packaging Specifications

Small current rectification

Packing

Embossed Tape

Reel Size(mm)

180

●Structure

Taping Width(mm)

8

Quantity(pcs)

3000

Epitaxial planar

Taping Code

T116

Marking

6B

●Absolute Maximum Ratings (Ta = 25ºC unless otherwise stated)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Forward current

Repetitive peak forward current

Symbol

VRM

VR

IF

IFRM

Conditions

Duty≦0.5

Reverse direct voltage

Direct current、per diode

t≦1s、Duty≦0.5、per diode

Limits

Unit

40

V

40

V

120

mA

120

mA

Peak forward surge current

IFSM

Square waveform、tp＜10ms、

Non-repetitive、one cycle、per diode、Ta=25℃

600

mA

Junction temperature

Storage temperature

Tj

-

Tstg

-

150

℃

-55 ～ 150

℃

●Characteristics (Tj = 25ºC unless otherwise stated)

Value per diode

Parameter

Forward voltage

Reverse current

※Caution：static electricity

Symbol

VF1

VF2

VF3

IR1

IR2

Conditions

IF=1mA

IF=10mA

IF=40mA

VR=30V

VR=40V

Min. Typ. Max. Unit

- - 0.38 V

- - 0.50 V

- - 1.00 V

- - 1 μA

- - 10 μA

Attention

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© 2020- ROHMCo., Ltd.All rights reserved.

　 　 　 　 　　 　 　

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2020/05/20_Rev.002

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