2SC4957-T1 Просмотр технического описания (PDF) - Renesas Electronics

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2SC4957-T1

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

Renesas Electronics 

2SC4957

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 5 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

h Note 1

FE

VCE = 3 V, IC = 10 mA

fT

VCE = 3 V, IC = 10 mA

S21e2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz

NF VCE = 3 V, IC = 3 mA, f = 2.0 GHz

C Note 2

re

VCB = 3 V, IE = 0 mA, f = 1.0 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

T83

T83

75 to 150

MIN. TYP. MAX. Unit

−

−

100

nA

−

−

100

nA

75

−

150

−

−

12

–

GHz

9

11

−

dB

−

1.5

2.5

dB

−

0.3

0.5

pF

2

Data Sheet PU10520EJ01V0DS

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