DTD123YG(2011) Просмотр технического описания (PDF) - Unisonic Technologies

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DTD123YG
(Rev.:2011)

DIGITAL TRANSISTORS (BUILT-IN RESISTORS)

Unisonic Technologies 

DTD123Y

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply voltage

VCC

50

V

Input voltage

VIN

-5 ~ +12

V

Output current

IC

500

mA

SOT-23/SOT-323

Power dissipation

TO-92

PD

200

mW

625

mW

Junction Temperature

Storage Temperature

TJ

TSTG

+150

℃

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC=5V, IOUT=100μA

VIN(ON) VOUT=0.3V, IOUT=20mA

Output Voltage

VOUT(ON) IO/II=50mA/2.5mA

Input Current

IIN

VIN=5V

Output Current

IO(OFF) VCC=50V, VIN=0V

DC Current Gain

hFE VOUT=5V, IOUT=50mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE=10V, IE= −50mA, f=100MHz (Note)

Note: Transition frequency of the device

MIN

2

56

1.54

3.6

TYP

0.1

2.2

4.5

200

MAX

0.3

0.3

3.6

0.5

UNIT

V

V

mA

μA

2.86 KΩ

5.5

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-087,C

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