PMBFJ308 Просмотр технического описания (PDF) - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
VGSoff
VGSS
IDSS
IGSS
RDSon
yfs
yos
gate-source breakdown voltage IG = −1 µA; VDS = 0
gate-source cut-off voltage
ID = 1 µA; VDS = 10 V
PMBFJ308
PMBFJ309
PMBFJ310
gate-source forward voltage
drain current
PMBFJ308
IG = 1 mA; VDS = 0
VDS = 10 V; VGS = 0
PMBFJ309
PMBFJ310
gate leakage current
drain-source on-state
resistance
VGS = −15 V; VDS = 0
VGS = 0; VDS = 100 mV
forward transfer admittance
common source output
admittance
ID = 10 mA; VDS = 10 V
ID = 10 mA; VDS = 10 V
MIN.
−25
−1
−1
−2
−
12
12
24
−
−
10
−
TYP.
−
−
−
−
−
−
−
−
−
50
−
−
MAX.
−
−6.5
−4
−6.5
1
60
30
60
−1
−
−
250
UNIT
V
V
V
V
V
V
mA
mA
mA
nA
Ω
mS
µS
1996 Sep 11
4
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