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PMBT5551 Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved

Номер в каталоге
Компоненты Описание
производитель
PMBT5551
NEXPERIA
Nexperia B.V. All rights reserved 
PMBT5551 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PMBT5551
NPN high-voltage transistor
31 August 2020
Product data sheet
1. General description
NPN high-voltage transistor in a SOT23 plastic package.
2. Features and benefits
Low current (max. 300 mA)
High voltage (max. 160 V)
AEC-Q101 qualified
3. Applications
General purpose
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
collector current
Conditions
open base
Min Typ Max Unit
-
-
160 V
-
-
300 mA
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
E
emitter
3
C
collector
Simplified outline
3
1
2
SOT23
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMBT5551
SOT23
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body

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