MTD8N06E Просмотр технического описания (PDF) - Motorola => Freescale
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MTD8N06E Datasheet PDF : 10 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
16
VGS = 10 V
7V
TJ = 25°C
9V
12
8V
6V
16
VDS ≥ 10 V
12
8
8
MTD8N06E
TJ = – 55°C
25°C
100°C
5V
4
4V
0
0
1
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
0
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.14
VGS = 10 V
0.12
TJ = 100°C
0.1
25°C
0.08
– 55°C
0.06
0.04
0
24
6
8 10 12 14 16
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.092
0.088
TJ = 25°C
0.084
0.08
0.076
VGS = 10 V
15 V
0.072
02
4
6
8 10 12 14 16
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
1.4 ID = 4 A
1.2
1
0.8
0.6
– 50 – 25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
1000
VGS = 0 V
TJ = 125°C
100
10
25°C
1
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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