MPS3646
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 0.5 Vdc)
(IC = 300 mA, VCE = 1.0 Vdc)
hFE
30
120
—
25
—
15
—
Collector – Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
VCE(sat)
—
(IC = 100 mAdc, IB = 10 mAdc)
—
(IC = 300 mAdc, IB = 30 mAdc)
—
(IC = 30 mA, IB = 3.0 mA, TA = 65°C)
—
0.2
Vdc
0.28
0.5
0.3
Base – Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mA)
VBE(sat)
0.73
0.95
Vdc
—
1.2
—
1.7
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT
350
—
MHz
Cobo
—
5.0
pF
Cibo
—
9.0
pF
Turn–On Time
Delay Time
Rise Time
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)
(Figure 1)
Turn–Off Time
Fall Time
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)
(Figure 1)
Storage Time
(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
ton
—
18
ns
td
—
10
ns
tr
—
15
ns
toff
—
28
ns
tf
—
15
ns
ts
—
18
ns
Figure 1. Switching Time Equivalent Test Circuit
Test
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
mA V Ω Ω
pF
V
VVV
A
10 3 330 270 4
–1.5 10.55 –4.15 10.70
ton
V1 t1
0
toff
V3
t1
0
VCC
RC
RB
B
10 10 5060 960
4
—
— –4.65 6.55 VEB(off)
V2
< 2 ns
< 2 ns
CS
C 100 10 560 96 12
–2.0 6.35 –4.65 6.55
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data