2N60 Просмотр технического описания (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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производитель
2N60 Datasheet PDF : 6 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 200 400 600 800 1000
Drain-Source Breakdown Voltage, BVDSS (V)
2N60 2N65
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate Threshold Voltage, VTH (V)
2N60 2N65
6 of 6
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