M5M4V16169DRT-7 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

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M5M4V16169DRT-7

16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M4V16169DTP/RT-7,-8,-10,-15

16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

Burst Mode Address

Initial Address

Sequential

Interleaved

BL

As2 As1 As0

Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7

0 00

01 2 34 5 67 01 2 345 6 7

0 01

1 2 34 5 67 010 3 25 4 76

0 10

2 34 5 67 01 23 0 16 7 45

0 11

34 5 67 01 232 1 07 6 54

8

1 00

4 5 67 01 2 345 6 70 1 23

1 01

5 67 01 2 34 54 7 61 0 32

1 10

67 01 2 34 567 4 52 3 01

1 11

7 01 2 34 5 676 5 43 2 10

0 00

01 2 3

01 2 3

- 01

1 2 30

4

- 10

2 3 01

10 3 2

23 0 1

- 11

3 01 2

32 1 0

- -0

01

2

- -1

10

01

10

Note: When SRAM command is executed more than burst length, the Address

repeats with the same sequence.

MITSUBISHI ELECTRIC

(REV 1.0) Jul. 1998

63

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