2N3903 / 2N3904
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
hFE
20
-
hFE
40
-
hFE
35
-
hFE
70
-
hFE
50
150
hFE
100
300
hFE
30
-
hFE
60
-
hFE
15
-
hFE
30
-
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
ICBO
-
50
IEBO
-
50
V(BR)CBO
60
-
V(BR)CEO
40
-
V(BR)EBO
6
-
VCEsat
-
0.2
VCEsat
-
0.3
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 5 V, f = 100 KHz
Emitter Base Capacitance
at VEB = 0.5 V, f = 100 KHz
Thermal Resistance Junction to Ambient
2N3903
2N3904
VBEsat
VBEsat
fT
fT
Ccb
Ceb
RthA
-
0.85
-
0.95
250
-
300
-
-
4
-
8
-
250 1)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
K/W