MRF9045NR1 Просмотр технического описания (PDF) - Freescale Semiconductor
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MRF9045NR1 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
20
50
19
Gps 45
18
η 40
17
VDD = 28 Vdc
Pout = 45 W (PEP)
16 IDQ = 350 mA
Two−Tone Measurement
100 kHz Tone Spacing
35
−30
−10
15
IMD −32
−12
14
−34
−14
IRL
13
−36
−16
12
−38
−18
930
935
940
945
950
955 960
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
21
20.5
IDQ = 525 mA
20
420 mA
19.5
350 mA
19
18.5
280 mA
18
VDD = 28 Vdc
17.5
f1 = 945 MHz
f2 = 945.1 MHz
17
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
−15
−20
−25
−30
−35
−40
−45
VDD = 28 Vdc
−50 f1 = 945 MHz,
f2 = 945.1 MHz
−55
0.1
IDQ = 280 mA
350 mA
420 mA
1
10
525 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
−10
VDD = 28 Vdc
−20 IDQ = 350 mA
f1 = 945 MHz
−30 f2 = 945.1 MHz
−40
−50
3rd Order
5th Order
−60
7th Order
−70
−80
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
22
60
20
Gps
50
18
40
16
30
14
20
12
10
0.1
η
1
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
10
10
0
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Power Gain and Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
MRF9045NR1
5
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