MRF9045NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF9045NR1

RF Power Field Effect Transistor

Freescale Semiconductor 

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

12

Date

Sept. 2008

Description

• Data sheet revised to reflect part status change, including use of applicable overlay.

• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC

Standard Package Number.

• Added Product Documentation and Revision History, p. 11

RF Device Data

Freescale Semiconductor

MRF9045NR1

11

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