ADG5209-EP Просмотр технического описания (PDF) - Analog Devices
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ADG5209-EP Datasheet PDF : 20 Pages
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ADG5208-EP/ADG5209-EP
Enhanced Product
Parameter
CD (On), CS (On)
ADG5208-EP
ADG5209-EP
POWER REQUIREMENTS
IDD
ISS
VDD/VSS
25°C −40°C to +85°C −55°C to +125°C Unit
Test Conditions/Comments
37
21
45
55
0.001
80
1
±9/±22
pF typ
pF typ
µA typ
µA max
µA typ
µA max
V min/V max
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VDD = +16.5 V, VSS = −16.5 V
Digital inputs = 0 V or VDD
Digital inputs = 0 V or VDD
GND = 0 V
1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between
Channels, ∆RON
On-Resistance Flatness, RFLAT (ON)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tD
Charge Injection, QINJ
25°C
140
160
3.5
8
34
45
±0.005
±0.1
±0.005
±0.1
±0.01
±0.2
0.002
3
140
170
120
140
160
185
45
0.4
−40°C to +85°C
200
9
55
±0.2
±0.4
±0.5
195
170
205
−55°C to +125°C
VDD to VSS
230
10
60
±0.4
±1.4
±1.4
2.0
0.8
±0.1
220
195
220
20
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
−86
dB typ
Channel-to-Channel Crosstalk −80
dB typ
Rev. C | Page 4 of 20
Test Conditions/Comments
VS = ±15 V, IS = −1 mA; see Figure 26
VDD = +18 V, VSS = −18 V
VS = ±15 V, IS = −1 mA
VS = ±15 V, IS = −1 mA
VDD = +22 V, VSS = −22 V
VS = ±15 V, VD = 15 V; see Figure 28
VS = ±15 V, VD = 15 V; see Figure 28
VS = VD = ±15 V; see Figure 25
VIN = VGND or VDD
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 10 V; see Figure 32
VS = 0 V, RS = 0 Ω, CL = 1 nF; see
Figure 34
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 29
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 27
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