B2100SAF Просмотр технического описания (PDF) - Diodes Incorporated.
Номер в каталоге
Компоненты Описание
производитель
B2100SAF Datasheet PDF : 5 Pages
| |||
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
VRRM
VRWM
VRM
IO
IFSM
B2100SAF
Value
Unit
100
V
2
A
60
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Ambient (Note 5)
Typical Thermal Resistance Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
RθJA
RθJC
TJ, TSTG
Value
90
30
-55 to +150
Unit
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Forward Voltage Drop
—
0.74
0.79
VF
—
0.60
—
Leakage Current (Note 6)
—
—
10
IR
—
—
2
Typical Capacitance
CT
—
93
—
Notes:
5. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pad.
6. Short duration pulse test used to minimize self-heating effect.
Unit
V
µA
mA
pF
Test Condition
IF = 2A, TJ = +25°C
IF = 2A, TJ = +125°C
VR = 100V, TJ = +25°C
VR = 100V, TJ = +125°C
VR = 4.0V, f = 1MHz
B2100SAF
Document number: DS39551 Rev. 3 - 3
2 of 5
www.diodes.com
December 2019
© Diodes Incorporated
Share Link: 