1N5405G Просмотр технического описания (PDF) - Guangzhou Juxing Electronic Co., Ltd.
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1N5405G Datasheet PDF : 2 Pages
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FEATURES
.· G lass Passivated chip junction
· High current capability
· Plastic package has Underwriters Laboratory
Flammability Classification 94V-O ctilizing
Flame Retardant Epoxy Molding Compound.
· Exceeds environmental standards of MIL-S-19500/228
· Low leakage.
MECHANICAL DATA
Case: Molded plastic, DO-201AD
Terminals: Plated axial leads, solderable per
MIL-STD-202, method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.04ounce, 1.1gram
1N5400G THRU 1N5408G
SILICON RECTIFIER
DO-20D1OA-D20(1DAOD-(2) 7)
.937 23.8
.937 23.8
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at T A=75℃
Peak Forward Surge Current,
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage
at 3.0A DC and 25℃
Maximum Reverse Current
at Rated DC Blocking Voltage
at TA=25℃
TA=100℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Symbols 1N5400G 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G Units
VRRM 50 100 200 300 400 500 600 800 1000 Volts
VRMS 35 70 140 210 280 350 420 560 700 Volts
VDC 50 100 200 300 400 500 600 800 1000 Volts
I(AV)
3.0
Amp
IFSM
125
Amp
VF
1.1
Volts
5.0
IR
uAmp
1000
CJ
50
pF
RθJA
18
℃/W
TJ
-55 to +150
℃
Tstg
-55 to +150
℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance Junction to Ambient and form junction to lead at 0.375"(9.5mm) lead length P.C.B. Mounted with 0.8x0.8" (20x20mm) copper pads.
version: 02
http://www.trr-jx.com
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