BUX41N Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

BUX41N

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

· Collector-Emitter Voltage-

: VCEO= 160V(Min)

·High Current Capability

·Good Linearity of hFE

APPLICATIONS

·Designed for high speed, high current, high power

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

220

V

VCEO Collector-Emitter Voltage

160

V

VCEX

Collector-Emitter Voltage VBE= -1.5V

220

V

VCER

Collector-Emitter Voltage RBE= 100Ω

200

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

18

A

ICM

Collector Current-Peak

25

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=100℃

TJ

Junction Temperature

3.6

A

120

W

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W

SPTECH website：www.superic-tech.com

BUX41N

1

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