2SC3309 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

2SC3309

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

hFE-2

DC Current Gain

IC= 1A; VCE= 5V

Switching times

tr

Rise Time

tstg

Storage Time

tf

Fall Time

IC= 0.8A; IB1= -IB2= 0.08A

RL= 250Ω;VCC≈200V

PW=20μs;Duty Cycle≤1%

2SC3309

MIN TYP. MAX UNIT

400

V

500

V

1.0

V

1.5

V

100 μA

1

mA

20

8

1.0 μs

2.5 μs

1.0 μs

SPTECH website：www.superic-tech.com

2

Share Link: