IPA037N08N3 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

IPA037N08N3

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3

·FEATURES

·Low drain-source on-resistance:

RDS(on) ≤3.7mΩ (max)

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Device for use in a wide variety of applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

80

VGS

Gate-Source Voltage

±20

ID

Drain Current-Continuous

75

IDM

Drain Current-Single Pulsed

300

PD

Total Dissipation @TC=25℃

41

Tj

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

MAX

3.7

UNIT

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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