IRFH4201TRPBF Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

IRFH4201TRPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRFH4201PbF

Qualification Information†

Qualification Level

Industrial

(per JEDEC JESD47F†† guidelines)

Moisture Sensitivity Level

PQFN 5mm x 6mm

MSL1

(per JEDEC J-STD-020D††)

RoHS Compliant

Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.infineon.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting TJ = 25°C, L = 0.38mH, RG = 50, IAS = 50A.

 Pulse width  400µs; duty cycle  2%.

 R is measured at TJ of approximately 90°C.

 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:

http://www.infineon.com/technical-info/appnotes/an-994.pdf

 Calculated continuous current based on maximum allowable junction temperature.

 Current is limited to 100A by source bonding technology.

Revision History

Date

05/17/2013

01/15/2013

03/16/2015

01/24/2017

Comments

 Updated package 3D drawing, on page 1.

 Added Continuous Drain Current limited by source bonding technology, on page 1.

 Divided note 6 into note 6 & 7, on page 8.

 Release of final data sheet.

 Updated package outline and tape and reel on pages 7 and 8.

 Changed datasheet with Infineon logo - all pages

 Added package outline for “option G” on page 7.

 Added disclaimer on last page

9

2017-01-24

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