IRFB59N10D Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

IRFB59N10D

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFB59N10D，IIRFB59N10D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID =250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID =250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=35.4A

IGSS

Gate-Source Leakage Current

VGS=±30V

IDSS

Drain-Source Leakage Current VDS=100V; VGS= 0V

VSD

Diode forward voltage

IS=35.4A, VGS = 0 V

MIN TYP MAX UNIT

100

V

3.0

5.5

V

0.025 Ω

±0.1 μA

25

μA

1.3

V

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