BFY50 Просмотр технического описания (PDF) - STMicroelectronics
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BFY50 Datasheet PDF : 5 Pages
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BFY50/BFY51
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
P a ram et er
Test Conditions
hie
Input Impedance
IC = 10 mA
for BFY50
for BFY51
VCE = 5 V f = 1KHz
hre
Reverse Voltage Ratio IC = 10 mA VCE = 5 V f = 1KHz
for BFY50
for BFY51
hoe Output Admittance
IC = 10 mA
for BFY50
for BFY51
VCE = 5 V f = 1KHz
td
Delay Time
IC = 150 mA
IB1 = 15 mA
VCC = 10 V
VBE = -2 V
tr
Rise Time
IC = 150 mA
IB1 = 15 mA
VCC = 10 V
VBE = -2 V
ts
Storage Time
IC = 150 mA VCC = 10 V
IB1 = -IB2 = 15 mA
tf
Fall Time
IC = 150 mA VCC = 10 V
IB1 = -IB2 = 15 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Min. Typ . Max. Un it
180
Ω
220
Ω
55
10-6
70
10-6
30
µS
35
µS
15
ns
40
ns
300
ns
60
ns
3/5
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