IRFY430C, IRFY430CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 500
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
1.5
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Typ Max Units
—— V
0.78 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 1.5 Ω
VGS = 10V, ID = 2.8A ➃
— 4.0 V
— — S( )
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 2.8A ➃
—
—
25
250
µA
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
— 100
— -100 nA
VGS = 20V
VGS = -20V
— 29.5
VGS =10V, ID = 4.5A
— 4.6 nC
VDS = 250V
— 19.7
— 35
— 30
— 55 ns
VDD = 250V, ID = 4.5A,
RG = 7.5Ω
— 30
6.8 —
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
650 —
135 — pF
65 —
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
—
—
—
—
4.5
18
A
VSD Diode Forward Voltage
— — 1.4 V
trr Reverse Recovery Time
— — 900 nS
QRR Reverse Recovery Charge
— — 7.0 µC
Tj = 25°C, IS = 4.5A, VGS = 0V ➃
Tj = 25°C, IF = 4.5A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
— — 1.67
— 0.21 —
— — 80
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com