ATP112 Просмотр технического описания (PDF) - ON Semiconductor
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ATP112 Datasheet PDF : 7 Pages
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Ordering number : ENA1754A
ATP112
P-Channel Power MOSFET
–60V, –25A, 43mΩ, Single ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=33mΩ(typ.)
• 4V drive
• Protection diode in
• Input Capacitance Ciss=1450pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (PW≤10μs)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--10V, L=500μH, IAV=--13A
*2 L≤500μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--25
A
--75
A
40
W
150
°C
--55 to +150
°C
50 mJ
--13
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP112-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP112
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/72110PA TKIM TC-00002329 No. A1754-1/7
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