MMBT5550-TP Просмотр технического описания (PDF) - Micro Commercial Components
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MMBT5550-TP Datasheet PDF : 2 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$% !"#
Features
• Halogen free available upon request by adding suffix "-HF"
• Collector Current: ICM=0.6A
• Collector-Base Voltage: V(BR)CBO=160V
• Operating And Storage Temperatures –55OC to 150OC
• Capable of 225mWatts of Power Dissipation
• Marking: M1F
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
* V (BR)CEO
V (BR)CBO
V (BR)EBO
ICBO
IEBO
Collector -Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=100Vdc, IE=0)
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
hFE-1
hFE-2
hFE-3
V CE(sat)
DC Current Gain
(VCE=5.0Vdc, IC=1.0mAdc)
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
DC Current Gain
(VCE=5.0Vdc, IC=50mAdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
V BE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc,IB=1.0mAdc)
(IC=50mAdc,IB=5.0mAdc)
140
---
Vdc
160
---
Vdc
6.0
---
Vdc
---
0.1 uAdc
---
50
nAdc
60
---
---
60
---
250
20
---
---
---
0.15
Vdc
---
0.25
Vdc
---
1.0
Vdc
---
1.2
Vdc
*Pulse test: pulse width <300uS, duty cycle< 2.0%
MMBT5550
NPN Plastic
Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.104
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 2
2013/11/28
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