2N4953 Просмотр технического описания (PDF) - Fairchild Semiconductor

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2N4953

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

2N4953

NPN General Purpose Amplifier

• This device designed for use as general purpose amplifier and

switches requiring collector currents to 500mA.

• Sourced from Process 10.

1

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

- Continuous

TJ, TST

Operating and Storage Junction Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value

30

60

5.0

1.0

-55 ~ +150

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

A

°C

©2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

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