2N5051 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2N5051

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Contunuous Collector Current-IC= 2A

·Power Dissipation-PD=40W @TC= 25℃

·High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 150V(Min)

APPLICATIONS

·Designed for untuned amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

2.0

A

IB

Base Current

1.0

A

PD

Total Power Dissipation@TC=25℃

40

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

3.76 ℃/W

2N5051

SPTECH website：www.superic-tech.com

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