2N6041 Просмотр технического описания (PDF) - Inchange Semiconductor

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2N6041

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2N6041

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0

-80

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ,IB= -16mA

-2.0

V

VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA

-4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -8A ,IB= -80mA

-4.5

V

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -4V

-2.8

V

ICBO

Collector Cutoff Current

VCB= -80V, IE= 0

-0.5 mA

ICEO

Collector Cutoff Current

VCE= -40V, IB= 0

-0.5 mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2.0 mA

hFE-1

DC Current Gain

IC= -4A; VCE= -4V

1000

20000

hFE-2

DC Current Gain

IC= -8A; VCE= -4V

100

COB

Output Capacitance

IE= 0; VCB= -10V,f= 0.1MHz

300

pF

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