2N5785 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

2N5785

Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors

New Jersey Semiconductor 

2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786

ELECTRICAL CHARACTERISTICS. At Gate Temperature <Tcj - 25°C unless otherwise specified

CHARACTERISTIC

Collector Cutoff Current:

With external bate-to-emitter

resistance (Rgg) = 100 fl

AtTc=150°C

SYMBOL

TEST CONDITIONS*

LIMITS

VOLTAGE

Vde

CURRENT 2N5783

Ade

p-n-p

2N5786

n-p-n

VCE VBE "c 'B VNn. Max. Min. Max.

UNITS

40

'CER

40

-

-10

-

10

JiA

-

-1

-

1

mA

With base-emitter junction reverse-

biased and external base-to-emitter

resistance (Rg^) - 100S2

'CEX

AtTc=1500C

-45

1.5

45 -1.5

-45

1.5

45 -1.5

: -10

-

10

PA

— -1 —

1

mA

With base open

!CEO

25

0

-

-100 -

100

MA

Emitter Cutoff Current

'EBO

-3.5 0

_

-10

-

10

MA

DC Forward-Current Transfer

Ratio

hFE

2

2

1.8"

20

100 20

100

3.2"

4

4

Collector-to-Eminer Sustaining

Voltage (see Figs. 2 and 3):

With base open

With external base-to-emitter

resistance (RBg) = 100 ft

VCEO<SUS)

VCER(sus)

0.1« 0 -40" -

40»>

-

V

0.1"

-45" - 45"

-

Base-to-Emitter Voltage

VBE

2

Collect or -to-Emitter

Saturation Voltage (measured

0.25 in (6.35 mm) fromca*e)c

VCE(sat)

Magnitude of Common-Emitter,

w Small-Signal, Short-Circuit,

Forward-Current Transfer Ratio**

f = 4 MHz

-2

f • 200 kHz

2

Common-Emitter, Small-Signal,

ShorM^ircuit, Forward-Current hfe

2

Transfer Ratio (f = 1 kHz)

Saturated Switching Time (Vcc =

30V.IB1 = IB2):

Turn-on

tQN

<td + tr>

Turn-off

M«f>

tQFF

Thermal Resistance •

Junction-to-case

Rejc

Junction-to-ambient

R0JA

1.6»

- -1.5 -

1.5

V

1.6° 0.16 - -1

-

1

V

3.2s 0.8

-2

2

-O.1

0.1

0.1

2

15

-

-

5

20

25

-

25

-

-1 -0.1 -

1 0.1

-1 -0.1 —

1 0.1

-

0.5 -

5

M*

2.5 —

15

17.5 —

175 -

17.5

175

°C/W

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