2N5676 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2N5676

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -5V

ICEO

Collector Cutoff Current

VCE= -50V; IB= 0

ICBO

Collector Cutoff Current

VCB= -125V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -5V

hFE-2

DC Current Gain

IC= -0.5A; VCE= -5V

fT

Current Gain-Bandwidth Product

IC= -0.1A; VCE= -10V

2N5676

MIN MAX UNIT

-100

V

-0.5

V

-1.2

V

-1.2

V

-0.5

mA

-0.1

mA

-0.1

mA

50

50

150

50

MHz

SPTECH website：www.superic-tech.com

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